2-22GHz LNA with AGC
CHA3024-QGG
Electrical Characteristics
Tamb.= +25°C,Vg1 to be set in order to have Idq=100mA, Vg2=1.7V
Symbol
Freq
Gain
ΔG
Parameter
Min
Typ
Max
Unit
GHz
dB
Frequency range
Linear Gain
2
22
15
30
3
Gain Control (with Vg2 variation)
Noise Figure
dB
NF
dB
IRL
Input Return Loss
17
16
18
20
28
100
5
dB
ORL
P1dB
Psat
OIP3
Idq
Output Return Loss
dB
Output power for 1dB Gain Compression
Saturated output power
dBm
dBm
dBm
mA
V
Output Third Order Intercept
Quiescent current on Vd
Supply voltage on Vd
Vd
4.5
5.5
Id
Drain current @3dB gain compression
125
mA
The values are representative of typical “test fixture” measurements as defined on the
drawing in paragraph “Proposed Evaluation Board”.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Vg1
Pin
13
1
Parameter
Gate control1 for the amplifier
Gate control2 for the amplifier
Drain Voltage
Values
-0.4
1.7
Unit
V
Vg2
V
Vd
25
5
V
The associated drain current with no RF input power is Idq=100mA
This typical bias is recommended in order to get the best compromise between output
power, linearity and Noise Figure performance vs. Temperature.
Ref. : DSCHA3024-QGG-4346 - 12 Dec 14
2/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
