2-22GHz LNA with AGC
CHA3024-99F
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Vd
Parameter
Values
7V
Unit
V
Drain bias voltage
Idq
Drain bias current
190
mA
V
Vg1
Vg2
Pin
Gate bias voltage Vg1
-2 to 0
1 to 2
Gate bias voltage Vg2
V
Maximum peak input power overdrive
Operating temperature range (chip backside)
Storage temperature range
15
dBm
°C
°C
Ta
-40 to 85
-55 to +150
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent
damage: these maximum ratings parameters could not be cumulated.
These are stress ratings only, and functional operation of the device at these conditions is
not implied.
Maximum Junction temperature=115°C with Ta=+85°C.
Rth_equivalent =60°C/W chip’s equivalent thermal resistance from channel to die bottom
with Ta. = +85°C and 5V & Idq=100mA.
The Rth_equivalent is extrapolated, taking into account the full DC power and the channel
temperature increase on the worst transistor.
Ref. : DSCHA30244242 - 29 Aug 14
3/12
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
