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CHA3024-99F 参数 Datasheet PDF下载

CHA3024-99F图片预览
型号: CHA3024-99F
PDF下载: 下载PDF文件 查看货源
内容描述: [2-22GHz LNA with AGC]
分类和应用:
文件页数/大小: 12 页 / 347 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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2-22GHz LNA with AGC  
CHA3024-99F  
Electrical Characteristics  
Tamb.= +25°C,Vg1 to be set in order to have Idq=100mA, Vg2=1.7V  
Symbol  
Freq  
Gain  
NF  
Parameter  
Min  
Typ  
Max  
Unit  
GHz  
dB  
Frequency range  
Linear Gain  
2
22  
15  
3
Noise Figure  
dB  
IRL  
Input Return Loss  
17  
17  
18  
20  
30  
100  
5
dB  
ORL  
P1dB  
Psat  
OIP3  
Idq  
Output Return Loss  
dB  
Output power for 1dB Compression  
Saturated output power  
dBm  
dBm  
dBm  
mA  
V
Output Third Order Intercept  
Quiescent current on Vd  
Vd  
Supply voltage on Vd  
4.5  
5.5  
Id  
Drain current @3dB gain compression  
120  
mA  
The values are representative of typical “test fixture” measurements as defined on the  
drawing in paragraph “Evaluation test fixture”.  
Typical Bias Conditions  
Tamb.= +25°C  
Symbol  
Vg1  
Pad No  
Parameter  
Gate control1 for the amplifier  
Gate control2 for the amplifier  
Drain Voltage  
Values  
-0.4  
1.7  
Unit  
V
6
2
3
Vg2  
V
Vd  
5
V
The associated drain current with no RF input power is Idq=100mA  
This typical bias is recommended in order to get the best compromise between output power,  
linearity and Noise Figure performance vs. Temperature.  
Ref. : DSCHA30244242 - 29 Aug 14  
2/12  
Specifications subject to change without notice  
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France  
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34