20-40GHz High Gain Buffer Amplifier
CHA2098b
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3 = 3.5V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
20
40
GHz
G
∆G
Small signal gain (1)
17
19
±1.5
30
dB
dB
Small signal gain flatness (1)
Reverse isolation (1)
Is
dB
P1db
P03
Output power at 1dB gain compression (1)
Output power at 3dB gain compression
13
15
16
dBm
dBm
16
VSWRin Input VSWR (1)
VSWRout Output VSWR (1)
3.0:1
3.0:1
10.0
200
NF
Id
Noise figure
Bias current
dB
150
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Parameter
Values
4.0
Unit
V
Drain bias voltage
Drain bias current
Gate bias voltage
Id
200
mA
V
Vg
-2.0 to +0.4
-40 to +85
-55 to +155
Ta
Operating temperature range
Storage temperature range
°C
°C
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA20981233 21-August-01
2/8
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
