20-40GHz Variable Gain Amplifier
CHA2097a
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3 = 3.5V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
20
40
GHz
G
∆G
Small signal gain (1)
16
18
±1.5
40
dB
dB
Small signal gain flatness (1)
Reverse isolation (1)
Is
dB
P1dB
P03
Output power at 1dB gain compression (1)
Output power at 3dB gain compression
13
15
14
dBm
dBm
16
VSWRin Input VSWR (1)
VSWRout Output VSWR (1)
3.0:1
3.0:1
Gctrl
Vdc
Gain control dynamic
DC voltage
12
dB
Vd
Vg
Vctrl
3.5
4.0
0.4
0.4
V
V
V
-2.0
-2.0
Id
Bias current
140
200
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Parameter
Values
4.0
Unit
V
Drain bias voltage
Drain bias current
Gate bias voltage
Id
200
mA
V
Vg
-2.0 to +0.4
-40 to +85
-55 to +155
Ta
Operating temperature range
Storage temperature range
°C
°C
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA20978021
2/8
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
