36-40GHz Low Noise Amplifier
CHA2094b
Electrical Characteristics
Tamb = +25°C, Vd1,2,3 = 3.5V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
Small signal gain (1)
36
40
GHz
G
DG
18
21
dB
dB
Small signal gain flatness (1)
Gain flatness over 40MHz ( within -30 ; +75°C )
Reverse isolation (1)
±1.5
0.5
25
5
dBpp
dB
DGsb
Is
30
8
P1dB
Output power at 1dB gain compression
dBm
VSWRin Input VSWR (1)
VSWRout Output VSWR (1)
2.5:1
2.5:1
3.0
3.0:1
3.0:1
4.0
NF
Vd
Noise figure (2)
DC Voltage
dB
Vd
Vg
3.5
-0.25
4
+0.4
V
V
-2
Id
Bias current (2)
60
100
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 60 mA is the typical bias current used for on wafer measurements, with Vg1,2 = Vg3. For
optimum noise figure, the bias current could be reduced down to 40 mA, adjusting the Vg1,2
voltage.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Parameter
Values
5.0
Unit
V
Drain bias voltage
Drain bias current
Gate bias voltage
Id
150
mA
V
Vg
-2.0 to +0.4
+15
Pin
Maximum peak input power overdrive (2)
Operating temperature range
dBm
°C
Ta
-40 to +85
-55 to +155
Tstg
Storage temperature range
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA20949312 – 08-Nov.-99
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
