CHA1008-99F
80-105GHz Balanced Low Noise Amplifier
Electrical Characteristics
Tamb.= +25°C, VD = 2.5V
Symbol
Freq
Parameter
Min
Typ
Max
Unit
GHz
dB
Frequency range
Linear Gain
80
105
Gain
NF
17
Noise Figure
[80-90]GHz
[90-100]GHz
[100-105]GHz
5.0
6.5
7.5
dB
RLlin
Input Return Loss
Output Return Loss
-12
-10
50
dB
dB
RLout
IN/OUT
Input & Output impedance in the chip plan
Ohms
impedance
OP1dB
Output Power @1dB compression
5
dBm
V
VG1, VG2 Gate voltages (either on VG1 or VG2 or
both on VG1 & VG2)
+0.15
VD
ID
Drain voltage
Drain current
2.5
V
115
mA
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
3.5
Unit
V
VD
ID
Drain bias voltage
Drain bias current
Gate bias voltage
150
mA
V
VG1, VG2
Pin
-2 to +0.8
0
Maximum peak input power overdrive (2)
Junction temperature
dBm
°C
Tj
175
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +150
°C
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol
VD
Parameter
Values
2.5
Unit
V
DC drain voltage
ID
Drain current controlled with VG1 or VG2
115
mA
V
VG1,
VG2
DC gate voltages linked together into the circuit (only one
can be used)
+0.15
Ref. : DSCHA10082118 - 27 Apr 12
2/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
