CHA1008-99F
80-105GHz Balanced Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA1008-99F is a broadband,
balanced, four-stage monolithic low noise
amplifier.
It is designed for Millimeter-Wave Imaging
applications and can be use in commercial
digital radios and wireless LANs.
The circuit is manufactured on a pHEMT
process, 0.10µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
IN
OUT
Main Features
■ Broadband performances: 80-105GHz
■ 16dB linear gain from 80 to 90GHz
■ 5dB noise figure from 80 to 90GHz
■ DC bias: VD=2.5V@ ID=115mA
■ Chip size 3.40x1.60x0.07mm
Gain & NF (dB)
20
18
16
14
12
10
8
6
4
2
0
78
80
82
84
Gain and Noise Figure
Gain
NF
86
88
90
92
94
96
98 100 102 104 106
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq
Frequency range
Gain
Linear Gain (from 80 to 90GHz)
NF
Noise Figure (from 80 to 90GHz)
Pout
Output Power @1dB comp.
Min
80
Typ
16
5
5
Max
105
Unit
GHz
dB
dB
dBm
Ref. : DSCHA10082118 - 27 Apr 12
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
