5-30GHz Attenuator
ATT_PO12748QAG
Electrical Characteristics
Tamb. = 25°C
Symbol
Parameter
Min
Typ
Max
Unit
Fin
Input frequency range
5
30
GHz
Min Att.
|S21| (V1=-5V;V2=-5V) ( 5 to 20GHz)
|S21| (V1=-5V;V2=-5V) ( 21 to 27GHz)
-4
-7
dB
dB
dB
dB
Max Att. |S21| (V1=0V;V2=0V) (5 to 10GHz)
|S21| (V1=0V;V2=0V) (11 to 30GHz)
-25
-35
2.5:1
2.5:1
25
VSWRin Input VSWR (any attenuation) ( 5 to 16GHz)
VSWRout Output VSWR (any attenuation) ( 5 to 20GHz)
Pin1dB
C/I3
Input 1dB compression point (any attenuation) (5 to 20GHz)
C/I3 @ Pin/tone=12dBm (any attenuation) (to 26GHz)
dBm
dB
42
These values are representative of onboard measurements as defined on the drawing 95542 (see
below).
Performances can be optimized thanks to external matching (refer to the “Sub-band enhancement”
section below).
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Absolute Maximum Ratings (1)
Tamb. = 25°C
Symbol
V1
Parameter
Values
-6V
Unit
V
V1 control voltage
V2 control voltage
RF input power
V2
-6V
V
Pin
32
dBm
°C
Ta
Operating temperature range
Storage temperature range
Operation of this device above anyone of these parameters may cause permanent
-40 to +85
-55 to +155
Tstg
(1)
°C
damage.
Typical Bias Conditions
for an ambient Temperature of +25°C
Symbol
Pin No.
Parameter
Values Unit
V1
V2
6
7
V1 control voltage
V2 control voltage
-5 to 0
-5 to 0
V
V
All other pins are not used for this device (but RFin : pin 3 and RFout : pin 10).
Ref. : DSATT-PO12748QAG5276 - 3 Oct 05
2/14
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
