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Product specification
2SA1812
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditons
IC=-50μA,IE=0
Min
-400
-400
-7
Typ Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-1mA,IB=0
V
IC=-50μA,IC=0
V
VCB=-400V
-10
μA
μA
IEBO
VEB=-6V
-10
hFE
VCE=-5V, IC=-50mA
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-5V, IC=-50mA, f=5MHz
VCB=-10V, IE=0, f=1MHz
82
270
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
-1
V
V
-1.2
12
18
0.6
2.7
1
MHz
pF
Collector output capacitance
Turn-on time
Cob
ton
μs
μs
μs
IC=-100mA,RL=1.5KΩ,IB1=-IB2=-
10mA,VCC=-150V
Storage time
tstg
Fall time
tf
■ hFE Classification
Marking
Rank
AJP
P
AJQ
Q
Range
82～180
120～270
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TYSEMI [ TY Semiconductor Co., Ltd ]
