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3EZ12 参数 Datasheet PDF下载

3EZ12图片预览
型号: 3EZ12
PDF下载: 下载PDF文件 查看货源
内容描述: 玻璃钝化结硅稳压二极管 [GLASS PASSIVATED JUNCTION SILICON ZENER DIODE]
分类和应用: 稳压二极管测试IOT
文件页数/大小: 5 页 / 284 K
品牌: TRSYS [ TRANSYS Electronics Limited ]
 浏览型号3EZ12的Datasheet PDF文件第1页浏览型号3EZ12的Datasheet PDF文件第2页浏览型号3EZ12的Datasheet PDF文件第3页浏览型号3EZ12的Datasheet PDF文件第5页  
For worst-case design, using expected limits of Iz, limits  
of PD and the extremes of TJ ( TJL ) may be estimated.  
Changes in voltage, Vz, can then be found from:  
excursions as low as possible.  
Data of Figure 2 should not be used to compute surge  
capability. Surge limitations are given in Figure 3. They  
are lower than would be expected by considering only  
junction temperature, as current crowding effects cause  
temperatures to be extremely high in small spots  
resulting in device degradation should the limits of Figure  
3 be exceeded.  
V =  
TJ  
VZ  
VZ , the zener voltage temperature coefficient, is  
found from Figures 5 and 6.  
Under high power-pulse operation, the zener voltage  
will vary with time and may also be affected significantly  
be the zener resistance. For best regulation, keep current  
RATING AND CHARACTERISTICS CURVES  
3EZ11 THRU 3EZ200  
TEMPERATURE COEFFICIENT REAGES  
(90% of the Units are int he Ranges Indicated)  
Fig. 5-UNITS TO 12 VOLTS  
Fig. 6-UNITS 10 TO 200 VOLTS  
Fig. 7-VZ = 3.9 THRU 10 VOLTS  
Fig. 8- VZ = 12 THRU 82 VOLTS