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3EZ12 参数 Datasheet PDF下载

3EZ12图片预览
型号: 3EZ12
PDF下载: 下载PDF文件 查看货源
内容描述: 玻璃钝化结硅稳压二极管 [GLASS PASSIVATED JUNCTION SILICON ZENER DIODE]
分类和应用: 稳压二极管测试IOT
文件页数/大小: 5 页 / 284 K
品牌: TRSYS [ TRANSYS Electronics Limited ]
 浏览型号3EZ12的Datasheet PDF文件第1页浏览型号3EZ12的Datasheet PDF文件第2页浏览型号3EZ12的Datasheet PDF文件第4页浏览型号3EZ12的Datasheet PDF文件第5页  
RATING AND CHARACTERISTICS CURVES  
3EZ11 THRU 3EZ200  
Fig. 2-TYPICAL THERMAL RESPONSE L  
Fig. 3-MAXIMUM SURGE POWER  
Fig. 4-TYPICAL REVERSE LEAKAGE  
APPLICATION NOTE:  
Since the actual voltage available from a given zener  
diode is temperature dependent, it is necessary to  
determine junction temperature under any set of  
operating conditions in order to calculate its value. The  
following procedure is recommended:  
The temperature of the lead can also be measured using  
a thermocouple placed on the lead as close as possible  
to the tie point. The thermal mass connected to the tie  
point is normally large enough so that it will not  
significantly respond to heat surges generated in the  
diode as a result of pulsed operation once steady-state  
conditions are achieved. Using the measured value of  
TL, the junction temperature may be determined by:  
TJ = TL + TJL  
Lead Temperature, TL, should be determined from:  
TL = LAPD + TA  
LA is the lead-to-ambient thermal resistance ( /W)  
and PD is the power dissipation. The value for LA will  
vary and depends on the device mounting method.  
LA is generally 30-40 /W for the various chips and  
tie points in common use and for printed circuit board  
wiring.  
TJL is the increase in junction temperature above the  
lead temperature and may be found from Figure 2 for a  
train of power pulses or from Figure 10 for dc power.  
TJL = LAPD