TS3300
ELECTRICAL CHARACTERISTICS
VBI = 1.2V, VBO = 3V, VBതതതEതതNതതꢀ = LOW, IBO= 20mA, L = 10µH, CBO = 22µF unless otherwise noted. Values are at TA = 25°C unless otherwise noted.
See Note 1.
PARAMETER
SYMBOL
CONDITIONS
BOOST REGULATOR
MIN
TYP
MAX
UNITS
Minimum Input Boost
Voltage
Maximum Input Boost
Voltage
Output Boost Voltage
Range
VBI_MIN
VBI_MAX
VBO
IBO = 0mA. TA=25ºC
0.6
0.75
V
V
Guaranteed by design
4.5
1.8
5.25
V
Current Measured at BO
IBO = 0mA,
VBO FB = 0.6V
TA =25°C
3.5
µA
µA
Current Measured at BI
0.07
IB_Q
Current Measured at BO
Current Measured at BI
Efficiency
6
0.9
µA
µA
%
IBO = 0mA,
VBO FB = 0.6V
VBI= 1.2V, VBO=1.8, IBO=30mA
Measured at BI.
VതBതതEതതNതത = VBI
-40°C < TA < +85°C
Eff
84
Boost Shutdown Supply
Current
ISHUTDOWN
100
nA
VBതതതEതതNതത = 0V
TA =25°C
Boost Feedback Voltage
during operation
Boost Feedback Pin
Current
Anti-Crush Feedback
Voltage
VBO FB
IBO FB
Output voltage accuracy: ± 4%
0.489
0.505
±0.1
0.392
50
0.521
±1
V
nA
V
VBI FB
VBI ≥ 0.6V
0.363
0.2
0.425
Anti-Crush Feedback
Voltage Hysteresis
VBI FB_HYST
VBതതതEതതNതതꢀ
mV
VIL
VIH
V
V
Boost Enable Threshold
VBI -0.05
VBതതതEതതNത_HYST
Boost Enable Hysteresis
Inductor Peak Current
200
mV
IPK
No Load
365
mA
Inductor Valley Current
N-channel ON Resistance
P-channel ON Resistance
IV
10
0.27
0.48
mA
ꢀ
ꢀ
RdsN-CH
RdsP-CH
TS3300DS r1p0
Page 3
RTFDS
TOUCHSTONE [ TOUCHSTONE SEMICONDUCTOR INC ]
