XP161A1355PR
■Electrical Characteristics
DC Characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state Resistance
( note )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
( note ) : Effective during pulse test.
| Yfs |
Vf
SYMBOL
Idss
Igss
Vgs (off )
Rds ( on )
CONDITIONS
Vds = 20V , Vgs = 0V
Vgs =
±
8V , Vds = 0V
Id = 1mA , Vds = 10V
Id = 2A , Vgs = 4.5V
Id = 2A , Vgs = 2.5V
Id = 0.5A , Vgs = 1.5V
Id = 2A , Vds = 10V
If = 4A , Vgs = 0V
0.5
0.37
0.05
0.1
10
0.85
1.1
MIN
TYP
MAX
10
±
10
Ta=25°C
UNITS
µA
µA
V
Ω
Ω
Ω
S
V
1.2
0.05
0.07
0.15
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds = 10V , Vgs = 0V
f = 1 MHz
MIN
TYP
390
210
90
MAX
Ta=25°C
UNITS
pF
pF
pF
Switching Characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
Vgs = 5V , Id = 2A
Vdd = 10V
CONDITIONS
MIN
TYP
10
15
85
45
MAX
Ta=25°C
UNITS
ns
ns
ns
ns
11
Thermal Characteristics
PARAMETER
Thermal Resistance
( channel-ambience )
SYMBOL
Rth ( ch-a )
CONDITIONS
Implement on a ceramic PCB
MIN
TYP
62.5
MAX
UNITS
°C
/ W
847
TOREX [ TOREX SEMICONDUCTOR ]
