Power MOS FET
NN-Channel
Power MOS FET
NDMOS
Structure
NLow
On-State Resistance : 0.05Ω (max)
NUltra
High-Speed Switching
NSOT-89
Package
NGate
Protect Diode Built-in
■Applications
GNotebook
PCs
GCellular
and portable phones
GOn-board
power supplies
GLi-ion
battery systems
■General Description
The XP161A1355PR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■Features
Low on-state resistance
: Rds (on) = 0.05Ω ( Vgs = 4.5V )
: Rds (on) = 0.07Ω ( Vgs = 2.5V )
: Rds (on) = 0.15Ω ( Vgs = 1.5V )
Ultra high-speed switching
Gate protect diode built-in
Operational Voltage
: 1.5V
High density mounting
: SOT-89
■Pin Configuration
■Pin Assignment
PIN
NUMBER
1
PIN
NAME
G
D
S
FUNCTION
Gate
Drain
Source
1
G
２
D
３
S
2
3
SOT-89
（TOP VIEW）
11
■Equivalent Circuit
■Absolute Maximum Ratings
Ta=25
O
C
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
20
±
8
4
16
4
2
150
- 55 ~ 150
UNITS
V
V
A
A
A
W
C
C
1
２
３
N-Channel MOS FET
( 1 device built-in )
O
O
( note ) : When implemented on a ceramic PCB
846
TOREX [ TOREX SEMICONDUCTOR ]
