THC63LVD103D _Rev.3.0_E
Electrical Characteristics
CMOS/TTL DC Specifications
V
= 3.0V ~ 3.6V, Ta = 0°C ~ +70°C
CC
Symbol
Parameter
Conditions
Min.
2.0
Typ.
Max.
Units
V
V
High Level Input Voltage RS=VCC or GND
V
V
IH
CC
V
Low Level Input Voltage
Small Swing Voltage
RS=VCC or GND
GND
1.2
0.8
2.8
IL
1
V
V
DDQ
V
Small Swing (RS=V
/2)
V
/2
DDQ
Input Reference Voltage
REF
DDQ
V
/2
Small Swing High Level
Input Voltage
DDQ
2
V
V
= V
= V
/2
/2
V
V
REF
REF
DDQ
SH
+100mV
V
/2
Small Swing Low Level
Input Voltage
DDQ
2
V
V
I
DDQ
SL
-100mV
Input Current
μA
0V ≤ V ≤ V
IN
±10
INC
CC
Notes: 1VDDQ voltage defines max voltage of small swing input. It is not an actual input voltage.
2 Small swing signal is applied to TA[6:0], TB[6:0], TC[6:0], TD[6:0], TE[6:0] and CLKIN.
LVDS Transmitter DC Specifications
V
= 3.0V ~ 3.6V, Ta = 0°C ~ +70°C
CC
Symbol
Parameter
Conditions
Min.
Typ.
350
Max.
Units
Normal swing
RS=VCC
250
450
mV
VOD
Differential Output Voltage
RL=100Ω
RL=100Ω
Reduced
swing
100
200
300
mV
RS=GND
Change in VOD between
complementary output states
ΔVOD
VOC
35
1.375
35
mV
V
Common Mode Voltage
1.125
1.25
Change in VOC between
complementary output states
ΔVOC
mV
mA
I
Output Short Circuit Current
VOUT=0V, RL=100Ω
-24
OS
/PDWN=0V,
I
Output TRI-STATE Current
μA
±10
OZ
V
=0V to VCC
OUT
Copyright©2011 THine Electronics, Inc.
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THine Electronics, Inc.
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