THC63LVD1027_Rev.2.0_E
Electrical Characteristics
THC63LVD1027 DC Specifications
Symbol
Vcap
Parameter
Capacitor pin appearance voltage
LV-TTL Input Low Voltage
Conditions
CCAP = 0.1µF
—
Min.
—
Typ.
1.8
Max.
—
Units
V
VIL_TTL
GND
—
0.8
VIH_TTL
IIN_TTL
2.0
—
VDD
LV-TTL Input High Voltage
—
—
LV-TTL Input Leakage Current
-4
—
+4
A
LVDS Receiver DC Specifications
Symbol
VIN_RX
VIC_RX
VTH_RX
VTL_RX
| VID_RX |
IIN_RX
Parameter
Conditions
Min.
0.3
Typ.
—
Max.
2.1
Units
LVDS-Rx Input voltage range
LVDS-Rx Common voltage
—
—
V
0.6
1.2
—
1.8
LVDS-Rx differential High threshold
LVDS-Rx differential Low threshold
LVDS-Rx differential Input Voltage
LVDS-Rx Input Leakage current
—
+100
—
VIC_RX = 1.2V
-100
100
-0.3
—
mV
—
—
—
600
0.3
—
mA
LVDS Transmitter DC Specifications
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
VOC_TX
LVDS-Tx Common voltage
Change in VOC between
complementary output states
—
1.125
1.25
1.375
V
VOC_TX
| VOD_TX |
VOD_TX
—
—
—
35
mV
mV
mV
Normal swing
Reduced swing
250
100
350
200
450
300
LVDS-Tx differential
Output Voltage
RL_TX = 100
Change in VOD between
—
—
—
35
complementary output states
LVDS-Tx Output Short current
LVDS-Tx Output Tri-state current
IOS_TX
IOZ_TX
Vout= GND
-24
-10
—
—
—
mA
uA
Vout= GND to Vcc
PD=GND
+10
Copyright©2010 THine Electronics, Inc.
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THine Electronics,Inc.
THINE [ THINE ELECTRONICS, INC. ]
