DB3/DB4
Silicon Bidirectional Diacs
Ratings and Characteristic Curves
FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE
FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE
+IF
10mA
10KΩ
500KΩ
D.U.T
IBO
IB
220V
60Hz
R=20Ω
Vo
-V
+V
0.1µ F
0.5VBO
V
VBO
-IF
FIG.4--POWER DISSIPATION VERSUS AMBIENT
TEMPERATURE (MAXIMUM VALUES)
FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A
P(mW)
160
140
120
90%
IP
100
80
60
40
10%
20
Tamb( ℃ )
tr
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION
TEMPERATURE(TYPICAL VALUES)
FIG.6--PEAK PULSEE CURRENT VERENT VERSUS
PULSE DURATION(MAXIMUM VALUES)
ITRM(A)
VBO(TJ)
VBO(TJ=25
)
1.08
1.06
2
1
f=100Hz
TJ(
)
TJ initial=25℃
1.04
0.1
tp(µ s)
1.02
1.00
0.01
10
100
1000
10000
25
50
75
100
125
TGS [ Tiger Electronic Co.,Ltd ]
