TIGER ELECTRONIC CO.,LTD
DB3/DB4
Silicon Bidirectional Diacs
VOLTAGE RANGE: 28-45 V
DO-35
Features
The three layer,two termnal,axial lead,hermetically
1111sealed
diacs are designed specifically for triggering
1111thyristors.They
demonstrate low breakover current at
1111breakover
voltage as they withstand peak pulse
1111current,The
breakover symmetry is within three
1111volts(DB3,DB4).
These diacs are intended for use in
CCCthyrisitors
phase control,circuits for lamp dimming,
FFFI
universal motor speed control,and heat control.
ABSOLUTE RATINGS
Parameters
Power dissipation on printed
T
A
=50
o
C circuit (L=10mm)
Repetitive peak on-state
current
tp=20 S
f=120Hz
Dimensions in inches and (millimeters)
Symbols
DB3,DB4
UNITS
Pc
150.0
mW
I
TRM
T
J
T
STG
2.0
-40--- +125
-40--- +125
A
o
Operating junction temperature
Storage temperature
C
C
o
ELECTRICAL CHARACTERISTICS
Parameters
Test Conditions
Min
Breakover voltage
(NOTE
1)
V
BO
I+V
BO
I-
I-V
BO
I
I±
VI
V
o
I
BO
t
r
I
R
C=22nf
(NOTE 2)
See FIG.1
C=22nf
(NOTE 2)
See FIG.1
I=(I
BO
to I
F
=10mA)
See FIG.1
See FIG.2
C=22nf
(NOTE 2)
See FIG.3
V
R
=0.5 V
BO
See FIG.1
DB3
28
32
36
±3.0
DB4
35
40
45
UNITS
Typ
Max
V
Breakover voltage symmetry
Dynamic breakover voltage
(NOTE 1)
Output voltage
(NOTE 1)
Breakover current
(NOTE 1)
Rise time
(NOTE 1)
Leakage current
(NOTE 1)
Max
Min
Min
Max
Typ
Max
V
V
V
A
S
A
5.0
5.0
100.0
1.5
10.0
NOTE: 1.Electrical characteristics applicable in both forw ard and reverse dirctions.
2.Connected in parallel w ith the devices
TGS [ Tiger Electronic Co.,Ltd ]
