9A HIGH-SPEED MOSFET DRIVERS
1
2
3
4
5
6
7
8
TC4421
TC4422
ELECTRICAL CHARACTERISTICS (cont.):
Measured over operating temperature range with 4.5V ≤ VS ≤ 18V unless otherwise specified.
Symbol
Input
Parameter
Test Conditions
Min
Typ
Max
Unit
VIH
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
10
V
V
VIL
IIN
0V ≤ VIN ≤ VDD
– 10
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
See Figure 1
VDD – 0.025
—
—
—
0.025
3.6
V
V
See Figure 1
—
—
—
Output Resistance, High
Output Resistance, Low
VDD = 18V, IO = 10 mA
VDD = 18V, IO = 10 mA
2.4
1.8
W
W
RO
2.7
Switching Time (Note 1)
tR
Rise Time
Figure 1, CL = 10,000 pF
Figure 1, CL = 10,000 pF
Figure 1
—
—
—
—
60
60
50
65
120
120
80
nsec
nsec
nsec
nsec
tF
Fall Time
tD1
Delay Time
Delay Time
tD2
Figure 1
80
Power Supply
IS
Power Supply Current
Operating Input Voltage
VIN = 3V
VIN = 0V
—
—
0.45
0.06
—
3
mA
V
0.2
18
VDD
4.5
NOTE: 1. Switching times guaranteed by design.
V
= 18V
DD
0.1 µF
+5V
90%
D2
1
8
INPUT
0.1 µF
0.1 µF
10%
0V
t
t
F
D1
t
t
R
2
6
7
+18V
INPUT
OUTPUT
90%
90%
OUTPUT
0V
C
= 10,000 pF
10%
10%
L
TC4421
4
5
INPUT: 100 kHz, square wave,
tRISE = tFALL ≤ 10nsec
Figure 1. Switching Time Test Circuit
TELCOM SEMICONDUCTOR, INC.
4-233
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
