9A HIGH-SPEED MOSFET DRIVERS
TC4421
TC4422
Operating Temperature (Ambient)
ABSOLUTE MAXIMUM RATINGS*
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version .......................................– 55°C to +125°C
Lead Temperature (10 sec)..................................... 300°C
Supply Voltage ............................................................20V
Input Voltage .......................... (VDD + 0.3V) to (GND - 5V)
Input Current (VIN > VDD) ........................................50 mA
Power Dissipation, TA ≤ 70°C
PDIP ..................................................................730W
CerDIP ............................................................800mW
5-Pin TO-220 ......................................................1.6W
Power Dissipation, TA ≤ 70°C
5-Pin TO-220 (With Heat Sink) .........................1.60W
Derating Factors (To Ambient)
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmay
affect device reliability.
PDIP ............................................................. 8mW/°C
CerDIP ....................................................... 6.4mW/°C
5-Pin TO-220 .............................................. 12mW/°C
Thermal Impedance (To Case)
5-Pin TO-220 RQJ-C ..................................................... 10°C/W
Storage Temperature ............................– 65°C to +150°C
Operating Temperature (Chip) ................................ 150°C
ELECTRICAL CHARACTERISTICS: TA = 25°C with 4.5V ≤ VDD ≤ 18V unless otherwise specified.
Symbol
Input
Parameter
Test Conditions
Min
Typ
Max
Unit
VIH
VIL
IIN
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
2.4
—
1.8
1.3
—
—
0.8
10
V
V
0V ≤ VIN ≤ VDD
– 10
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
See Figure 1
VDD – 0.025
—
—
—
0.025
—
V
V
Ω
Ω
A
A
See Figure 1
—
—
—
—
2
Output Resistance, High
Output Resistance, Low
Peak Output Current
VDD = 18V, IO = 10 mA
VDD = 18V, IO = 10 mA
VDD = 18V
1.4
0.9
9
RO
1.7
IPK
—
IDC
Continuous Output Current 10V ≤ VDD ≤ 18V, TC = 25°
(TC4421/22 CAT only)
IREV
Latch-Up Protection
Duty Cycle ≤ 2%
>1500
—
—
mA
Withstand Reverse Current
t ≤ 300 µsec
Switching Time (Note 1)
tR
Rise Time
Figure 1, CL = 10,000 pF
Figure 1, CL = 10,000 pF
Figure 1
—
—
—
—
60
60
30
33
75
75
60
60
nsec
nsec
nsec
nsec
tF
Fall Time
tD1
tD2
Delay Time
Delay Time
Figure 1
Power Supply
IS
Power Supply Current
Operating Input Voltage
VIN = 3V
VIN = 0V
—
—
0.2
55
—
1.5
150
18
mA
µA
V
VDD
4.5
Input
VIH
VIL
IIN
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
10
V
V
0V ≤ VIN ≤ VDD
– 10
µA
4-232
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
