Preliminary Specification
THN6701B
□ Application Information
RF performance at TS ≤ 60 ℃ in common emitter configuration
Operation Mode
CW, class-AB
f (MHz)
465
VCE (V)
6
POUT (dBm)
35
GP (dB)
≥10
ηC (%)
60
Output Power or Power Gain
vs. Input Power
Collector Current or Collector Efficiency
vs. Input Power
40
35
30
25
20
15
10
18
16
14
12
10
8
1.6
80
70
60
50
40
30
20
10
0
f = 465 MHz, VCC = 6 V, ICQ = 50 mA
f = 465 MHz, VCC = 6 V, ICQ = 50 mA
1.4
1.2
POUT
GP
1.0
ηC
0.8
IC
0.6
0.4
0.2
0.0
6
30
0
5
10
15
20
25
30
0
5
10
15
20
25
Input Power, PIN (dBm)
Input Power, PIN (dBm)
http://www.tachyonics.co.kr
Sept. 2005.
Rev. 1.0
Page 4 of 6
TI [ TEXAS INSTRUMENTS ]
