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THN6501 参数 Datasheet PDF下载

THN6501图片预览
型号: THN6501
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管 [NPN SiGe RF TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 15 页 / 231 K
品牌: TI [ TEXAS INSTRUMENTS ]
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THN6501 Series  
Electrical Characteristics ( TA = 25 )  
Value  
Symbol  
Parameter  
Test Condition  
Unit  
Min.  
Typ. Max.  
ICBO  
ICEO  
IEBO  
hFE  
fT  
VCB = 19 V, IE = 0 mA  
VCE = 12 V, IB = 0 mA  
0.5  
5
uA  
uA  
uA  
Collector Cut-off Current  
V
V
EB = 1 V, IC = 0 mA  
CE = 3 V, IC = 15 mA  
Emitter Cut-off Current  
DC Current Gain  
0.5  
300  
80  
8
150  
9
VCE = 3 V, IC = 30 mA  
CB = 10 V, f = 1 MHz  
Transition Frequency  
Collector to Base Capacitance  
GHz  
pF  
CCB  
V
0.85  
VCE = 3 V, IC = 7 mA, f = 1 GHz  
VCE = 3 V, IC = 15 mA, f = 1 GHz  
VCE = 3 V, IC = 7 mA, f = 1 GHz  
VCE = 3 V, IC = 15 mA, f = 1 GHz  
VCE = 3 V, IC = 7 mA, f = 1 GHz  
VCE = 3 V, IC = 7 mA, f = 1 GHz  
VCE = 3 V, IC = 7 mA, f = 1 GHz  
VCE = 3 V, IC = 15 mA, f = 1 GHz  
VCE = 6 V, IC = 15 mA, f = 1 GHz  
8
9
9.5  
11  
|S21|2  
Insertion Power Gain  
dB  
dB  
12.5  
13  
14.5  
15  
MAG Maximum Available Gain  
NFmin Minimum Noise Figure  
1.0  
dB  
rn  
Noise Resistance  
0.049  
12  
10  
10  
GA  
Associated Gain  
dB  
12.5  
27  
OIP3  
Output 3rd Order Intercept  
dBm  
Aug.-2005  
Rev 2.0  
www.tachyonics.co.kr  
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