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THN6201 参数 Datasheet PDF下载

THN6201图片预览
型号: THN6201
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管 [NPN SiGe RF TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 13 页 / 251 K
品牌: TI [ TEXAS INSTRUMENTS ]
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THN6201 series  
Electrical Characteristics ( TA = 25 )  
Value  
Unit  
Symbol  
Parameter  
Test Condition  
Min. Typ. Max.  
ICBO  
ICEO  
IEBO  
hFE  
fT  
V
CB = 19 V, IE = 0 mA  
-
-
-
-
-
Collector Cut-off Current  
0.5  
5
uA  
uA  
uA  
VCE = 12 V, IB = 0 mA  
VEB = 1 V, IC = 0 mA  
-
0.5  
Emitter Cut-off Current  
DC Current Gain  
VCE = 3 V, IC = 15 mA  
80  
-
200 300  
VCE = 3 V, IC = 15 mA  
12  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GHz  
pF  
Transition Frequency  
Collector to Base Capacitance  
CCB  
VCB = 10 V, f = 1 MHz  
-
0.47  
VCE = 3 V, IC = 5 mA, f = 1 GHz  
VCE = 3 V, IC = 15 mA, f = 1 GHz  
VCE = 3 V, IC = 5 mA, f = 2 GHz  
VCE = 3 V, IC = 15 mA, f = 2 GHz  
VCE = 3 V, IC = 5 mA, f = 1 GHz  
VCE = 3 V, IC = 15 mA, f = 1 GHz  
VCE = 3 V, IC = 5 mA, f = 2 GHz  
VCE = 3 V, IC = 15 mA, f = 2 GHz  
VCE = 3 V, IC = 5 mA, f = 1 GHz  
VCE = 3 V, IC = 5 mA, f = 2 GHz  
VCE = 3 V, IC = 5 mA, f = 1 GHz  
VCE = 3 V, IC = 5 mA, f = 2 GHz  
VCE = 3 V, IC = 5 mA, f = 1 GHz  
VCE = 3 V, IC = 15 mA, f = 1 GHz  
VCE = 3 V, IC = 5 mA, f = 2 GHz  
VCE = 3 V, IC = 15 mA, f = 2 GHz  
11.5 13.5  
13  
6
15  
8
|S21|2  
Insertion Power Gain  
dB  
dB  
7.5  
15  
9.5  
17  
16.5 18.5  
MAG  
Maximum Available Gain  
10  
11  
-
12  
13  
1.1  
NFmin Minimum Noise Figure  
dB  
-
1.5  
-
0.12  
0.06  
rn  
GA  
Noise Resistance  
-
12.5 14.5  
14  
8
16  
10  
11  
Associated Gain  
dB  
9
V
CE = 3 V, IC = 15 mA, f = 1 GHz  
P1dB, IN  
Input 1dB Compression Point  
-
10  
-
dBm  
(ZS = ZSopt, ZL = ZLopt  
)
Aug.-2005  
Rev 2.0  
www.tachyonics.co.kr  
- 2/13 -