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THM1001TE 参数 Datasheet PDF下载

THM1001TE图片预览
型号: THM1001TE
PDF下载: 下载PDF文件 查看货源
内容描述: 的SiGe HBT MMIC功率放大器 [SiGe HBT MMIC POWER AMPLIFIER]
分类和应用: 放大器功率放大器
文件页数/大小: 9 页 / 172 K
品牌: TI [ TEXAS INSTRUMENTS ]
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THM1001TE  
AC Electrical Characteristics  
Condition : VCC0=VCC1=VCC2=VRAMP=3.3V, PIN=+2dBm, TA=25, f=2.45GHz,  
Input and Output externally matched to 50 Ωunless otherwise noted.  
Symbol  
Note  
Parameter  
Frequency Range  
Min. Typ.  
Max.  
Unit  
fL-U  
Pout  
3
1
1
3
2400 ~ 2500  
23  
MHz  
dBm  
dBm  
dB  
Output Power @PIN = +2dBm, VCTL=3.3V  
Output Power @PIN = +2dBm, VCTL=0.4V  
Output Power Variation over temperature  
22  
-20  
-10  
Ptemp  
TBD  
(-40 <TA<+85  
)
dPOUT/dVCTL  
PAE  
3
Control Voltage Sensitivity  
120  
dBm/V  
%
Power Added Efficiency at +23dBm  
Output Power  
44  
G
3
3
Gain @ PIN= -20dBm  
Gain @ PIN= -10dBm  
25  
24  
26  
25  
dB  
dB  
GVAR  
Gain Variation over band (2400-2500  
MHz)  
0.7  
1.0  
30  
dB  
2f,3f,4f,5f  
|S21|OFF  
3, 4  
2
Harmonics  
35  
35  
dBc  
dB  
Isolation in “OFF” State, PIN=+2dBm,  
V
RAMP=0V  
|S12|  
2
2
Reverse Isolation  
34  
dB  
STAB  
Stability (PIN=+2dBm, Load VSWR=6:1)  
All non-harmonically  
Related outputs less than –50dBc  
Notes : (1) Guaranteed by production test at TA=25.  
(2) Guaranteed by design only  
(3) Guaranteed by design and characterization  
(4) Harmonic levels are greatly affected by topology of external matching networks.  
60-8, Gasan-dong, Kumchun-Gu  
Seoul, Korea. 153-023  
http://www.tachyonics.co.kr  
Rev. 1.1  
Page 4