THM1001TE
SiGe HBT MMIC
POWER AMPLIFIER
Description
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the THM1001TE is
designed for 2.4GHz wireless applications including Bluetooth
tm
Class 1 wireless
technology and 2.4GHz cordless telephone applications. It delivers +23 dBm output
power, making it capable of overcoming insertion losses of up to 3.0dB between amplifier
output and antenna.
The silicon-germanium structure of the THM1001TE, and its exposed-die-pad
package, soldered to the system PCB, provide high thermal conductivity and a
subsequently low junction temperature.
Features
•
+23 dBm at 44% Power Added Efficiency
•
Temperature stability better than 1dB
•
Power-control and Power-down modes
•
Single 3.3 V Supply Operation
•
Temperature Rating: -40C to +85C
•
8 lead Exposed Pad MSOP8 Plastic Package
E_PAD MSOP8
Applications
•
Bluetooth
tm
Wireless Technology (Class 1)
•
USB Dongles, modules
•
PCMCIA, Flash cards
•
Access Points
•
2.4GHz cordless telephone
60-8, Gasan-dong, Kumchun-Gu
60
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Gasan
-
Kumchun
-
Seoul, Korea. 153-023
153
-
Page 1
http://www.tachyonics.co.kr
http://
www.tachyonics.co.kr
Rev. 1.1
TACHYONICS [ TACHYONICS CO,. LTD ]
