SMM150
Preliminary Information
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Temperature Under Bias ...................... -55°C to 125°C
Storage Temperature QFN................... -65°C to 150°C
Terminal Voltage with Respect to GND:
Temperature Range (Industrial) .......... –40°C to +85°C
(Commercial).............. 0°C to +70°C
VDD Supply Voltage.................................. 2.7V to 5.5V
Inputs.........................................................GND to VDD
VDD Supply Voltage ..........................-0.3V to 6.0V
All Others ................................-0.3V to VDD + 0.7V
FAULT#…………………………….… GND to 15.0V
Output Short Circuit Current ............................... 100mA
Reflow Solder Temperature (10 secs)….………....240°C
Junction Temperature.........................…….....…...150°C
ESD Rating per JEDEC……………………..……..2000V
Latch-Up testing per JEDEC………..……......…±100mA
Package Thermal Resistance (θJA)
28 Pad QFN…………….…………………….…80oC/W
20 Ball Ultra CSPTM………..………….…….…TBDoC/W
Moisture Classification Level 1 (MSL 1) per J-STD- 020
Note - The device is not guaranteed to function outside its operating
rating. Stresses listed under Absolute Maximum Ratings may cause
permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions
outside those listed in the operational sections of the specification is
not implied. Exposure to any absolute maximum rating for extended
periods may affect device performance and reliability. Devices are
ESD sensitive. Handling precautions are recommended.
RELIABILITY CHARACTERISTICS
Data Retention……………………………..…..100 Years
Endurance……………………….……….100,000 Cycles
DC OPERATING CHARACTERISTICS
(Over recommended operating conditions, unless otherwise noted. All voltages are relative to GND.)
Symbol
VDD
Parameter
Supply Voltage
Notes
Min.
Typ.
Max
Unit
V
2.7
3.3
5.5
VM
IDD
Positive Sense Voltage
VM pin
TRIM pin floating
0.3
VDD
V
Power Supply Current from
VDD
3
mA
TRIM output current through TRIM Sourcing Max Current
1.5
-1.5
mA
mA
V
ITRIM
TRIM Sinking Max Current
100Ω to 1.0V
VTRIM
VADOC
TRIM output voltage range
GND
0.3
2.5
I
TRIM ±1.5mA
Depends on Trim range of DC-
DC Converter
Margin Range
VDD
V
V
V
V
V
Input High Voltage
VDD = 2.7V
0.9xVDD
0.7xVDD
VDD
VDD
VIH
SDA,SCL,WP,MUP,MDN
Input Low Voltage
VDD = 5.0V
VDD = 2.7V
0.1xVDD
0.3xVDD
VIL
SDA,SCL,WP,MUP,MDN
Open Drain Output
FAULT#, READY
VDD = 5.0V
VOL
VAIH
VAIL
ISINK = 1mA
0.2
0.9xVDD
0.7xVDD
VDD
VDD
Address Input High Voltage, VDD = 2.7V, Rpullup≤300kΩ
A2, A1, A0
VDD = 5.0V, Rpullup≤300kΩ
0.1xVDD
0.3xVDD
+1.4
Address Input Low Voltage, VDD = 2.7V, Rpulldown≤300kΩ
V
A2, A1, A0
VDD = 5.0V, Rpulldown≤300kΩ
Address Input Tristate
VDD = 2.7V
-1.8
-2.0
0
IAIT
µA
V
Maximum Leakage – High Z
Monitor Voltage Range
VDD = 5.0V
+1.6
OV/UV
VHYST
RPull-Up
COMP1 and COMP2 pins
COMP1 and COMP2 pins,
VTH-VTL (see Note 1)
See Pin Descriptions
VDD
COMP1/2 DC Hysteresis
Input Pull-Up Resistors
10
50
mV
kΩ
Note 1 – The Base DC Hysteresis voltage is measured with a 1.25V external voltage source. The resulting value is determined by subtracting
Threshold Low from Threshold High, VTH-VTL while monitoring the FAULT# pin state. Base DC Hysteresis is measured with a 1.25V input. Actual DC
Hysteresis is derived from the equation: (VIN/VREF)(Base Hysteresis). For example, if VIN=2.5V and VREF=1.25V then Actual DC Hysteresis=
(2.5V/1.25V)(0.003V)=6mV.
Summit Microelectronics, Inc
2075 2.6 05/13/05
5
SUMMIT [ SUMMIT MICROELECTRONICS, INC. ]
