STP7401
P Channel Enhancement Mode MOSFET
-2.8A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=-250uA
-30
V
V
Gate Threshold Voltage
VDS=VGS,ID=-250uA -0.4
-1.0
±
±
VDS=0V,VGS= 12V
100
-1
Gate Leakage Current
nA
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
Zero Gate Voltage Drain
Current
IDSS
uA
A
-5
℃
TJ=85
≦
VDS -5V,VGS=-4.5V
On-State Drain Current
ID(on)
-4.0
VGS=-10V,ID=-2.8A
VGS=-4.5V,ID=-2.5A
VGS=-2.5V,ID=-1.5A
VGS=-1.8V,ID=-1.0A
115
135
170
240
105
125
155
210
Ω
m
Drain-source On-Resistance
RDS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
gfs
VDS=-5V,ID=-4.0V
IS=-1.0A,VGS=0V
4
S
V
VSD
-0.8 -1.2
Total Gate Charge
Qg
Qgs
Qgd
5.8
0.8
1.5
VDS=-15V
VGS=-4.5V
ID -2.0A
Gate-Source Charge
nC
pF
≣
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Ciss
Coss
380
55
VDS=-15V
VGS=0V
F=1MHz
Crss
40
6
VDS=-15V
ID=-1A
td(on)
Turn-On Time
Turn-Off Time
tr
3.9
40
15
Ω
RL=15
nS
Ω
RG=-3
td(off)
tf
VGEN=-10V
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP7401 2005. V1
STANSON [ STANSON TECHNOLOGY ]
