P Channel Enhancement Mode MOSFET
STP7401
-2.8A
DESCRIPTION
STP7401 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-323 (SC-70)
FEATURE
-30V/-2.8A,
R
DS(ON)
= 115mΩ
@V
GS
= -10V
-30V/-2.5A, R
DS(ON)
= 135mΩ
@V
GS
= -4.5V
-30V/-1.5A, R
DS(ON)
= 170mΩ
@V
GS
= -2.5V
-30V/-1.0A, R
DS(ON)
= 240mΩ
@V
GS
= -1.8V
Super high density cell design for
Extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOT-323 (SC-70) package design
3
D
G
1
1.Gate
2.Source
S
2
3.Drain
PART MARKING
SOT-323
3
01YW
1
Y: Year Code
2
A: Process Code
ORDERING INFORMATION
Part Number
STP7401S32RG
Package
SOT-323
Part Marking
01YW
※
Process Code : A ~ Z ; a ~ z
※
ST7401S32RG
S32 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP7401 2005. V1
STANSON [ STANSON TECHNOLOGY ]
