STP6308
Dual P Channel Enhancement Mode MOSFET
-1.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown
Voltage
V(BR)DSS
-20
V
VGS=0V,ID=250uA
Gate Threshold Voltage
VGS(th)
IGSS
-0.35
-0.8
V
VDS=VGS,ID=250uA
VDS=0V,VGS=+/-12V
VDS=20V,VGS=0V
Gate Leakage Current
±100 nA
-1
Zero Gate Voltage Drain
Current
IDSS
uA
-5
VDS=20V,VGS=0V
TJ=85℃
On-State Drain Current
ID(on)
V
DS≦5V,VGS=4.5V
-2
A
420
580
750
1.5
520
VGS=4.5V,ID=1.0A
VGS=2.5V,ID=0.8A
VGS=1.8V,ID=0.5A
700
950
Drain-source On-Resistance
RDS(on)
mΩ
Forward Transconductance
Diode Forward Voltage
gfs
S
V
VDS=10V,ID=1.0A
IS=0.5A,VGS=0V
VSD
-0.8
-1.2
2.0
DYNAMIC
Total Gate Charge
Qg
1.5
VDS=-10V,VGS=-4.5V,
ID=0.88A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
0.3
0.2
Input Capacitance
Ciss
Coss
Crss
145
25
VDS=-10V,VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
10
Turn-On Time
Td(on)
tr
Td(off)
tf
18
25
15
12
30
40
45
20
nS
VDD=10V, RL=20Ω, ID=-0.5A,
VGEN=-4.5V, RG=6Ω
Turn-Off Time
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP6308 2009. V1
STANSON [ STANSON TECHNOLOGY ]
