STP6308
STP6308
Dual P Channel Enhancement Mode MOSFET
-1.0A
DESCRIPTION
STP6308 is the dual P-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as
notebook computer circuits where high-side switching, low in-line power loss and
resistance to transients are needed.
PIN CONFIGURATION
SOT-363 / SC70-6L
D1
G2
S2
FEATURE
½
½
½
½
½
-20V/1.0A, R
DS(ON)
= 520mΩ@V
GS
=4.5V
-20V/0.8A, R
DS(ON)
=700mΩ@V
GS
=2.5V
-20V/0.7A, R
DS(ON)
=950mΩ@V
GS
=1.8V
Super high density cell design for extremely
low R
DS(ON)
Exceptional low on-resistance and maximum
DC current capability
SOT-363 / SC70-6L package design
08YW
½
S1
G
D2
Y: Year
A: Process Code
ORDERING INFORMATION
Part Number
STP6308
Package
SOT-363 / SC70-6L
Part Marking
YA
※
Process Code : A ~ Z(1~26) ; a ~ z(27~52)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP6308 2009. V1
STANSON [ STANSON TECHNOLOGY ]
