STP4931
Dual P Channel Enhancement Mode MOSFET
8.5A
-
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=-250uA
-20
V
V
Gate Threshold Voltage
Gate Leakage Current
VDS=VGS,ID=-250 uA -0.35
-0.9
±
±
100
VDS=0V,VGS= 12V
nA
VDS=-16V,VGS=0V
VDS=-20V,VGS=0V
-1
IDSS
TJ=55
Zero Gate Voltage Drain
Current
℃
uA
A
-10
On-State Drain Current
ID(on)
VDS=-5V,VGS=4.5V
-25
VGS=-4.5V, ID=-8.5A
VGS=-2.5V, ID=-8.0A
VGS=-1.8V,ID=-5.0A
0.016 0.020
0.020 0.025
0.028 0.035
Ω
Drain-source On-Resistance
RDS(on)
Forward Tran Conductance
Diode Forward Voltage
Dynamic
VDS=-5.0V,ID=-10A
IS=-2.5A,VGS=0V
36
S
V
gfs
VSD
-0.8 -1.2
Total Gate Charge
Qg
Qgs
Qgd
30
4.5
8.0
45
VDS=-10V,VGS=-5.0V
Gate-Source Charge
≡
ID -10A
nC
pF
Gate-Drain Charge
Input Capacitance
Ciss
Coss
Crss
2670
520
VDS =-15V,VGS=0V
f=1MHz
Output Capacitance
Reverse TransferCapacitance
480
25
45
40
70
td(on)
Turn-On Time
Turn-Off Time
Ω
VDD=-10V,RL=15
tr
ID=-1.0A,VGEN=-4.5V
nS
145 240
70 115
Ω
RG=6
td(off)
tf
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4931 2009. V1
STANSON [ STANSON TECHNOLOGY ]
