STP4407
P Channel Enhancement Mode MOSFET
12A
-
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Static
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=-250uA
-30
V
V
VDS=VGS,ID=-250uA -1.0
VDS=0V,VGS=±25V
-3.0
±100
Gate Leakage Current
nA
VDS=-30V,VGS=0V
VDS=-30V,VGS=0V
-1
-5
Zero Gate Voltage
Drain Current
IDSS
TJ=55℃
uA
A
On-State Drain
Current
ID(on)
VDS=-5V,VGS=-10V
-60
VGS=-20V,ID=-12A
VGS=-10V,ID=-12A
VGS=-5V, ID=-10A
9
10
15
Drain-source On-
Resistance
RDS(on)
mΩ
Forward
Transconductance
gfs
VDS=-5V,ID=-10A
IS=-1.0A,VGS=0V
26
S
V
Diode Forward Voltage
VSD
-1
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
30
4.3
10
VDS=-15V,VGS=0V
f=1MHz
Gate-Source Charge
nC
pF
Gate-Drain Charge
Input Capacitance
Ciss
2076 2500
400
Output Capacitance
VDS ==-15V,VGS=0V
f=1MHz
Coss
Reverse
TransferCapacitance
Crss
302
10.4
td(on)
tr
Turn-On Time
Turn-Off Time
VDD=15V,RL=1.25Ω
ID=-1A,VGEN=-10V
RG=3Ω
24
12.6
12
nS
td(off)
tf
3
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Copyright © 2007, Stanson Corp.
STP4407 2009. V1
STANSON [ STANSON TECHNOLOGY ]
