STP4407
STP4
P Channel Enhancement Mode MOSFET
-
12A
DESCRIPTION
The STP4407 is the P-Channel logic enhancement mode power field effect transistor
is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular
phone and notebook computer power management and other batter powered
circuits where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
½
½
½
½
½
½
-30V/-12A, R
DS(ON)
= 9mΩ
@V
GS
= -20V
-30V/-12A, R
DS(ON)
= 10mΩ
@V
GS
= -10V
-30V/-10A, R
DS(ON)
= 15mΩ
@V
GS
= -5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum DC
current capability
SOP-8 package design
PART MARKING
SOP-8
1
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Copyright © 2007, Stanson Corp.
STP4407 2009. V1
STANSON [ STANSON TECHNOLOGY ]
