STN8205D
Dual N Channel Enhancement Mode MOSFET
5.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Static
Symbol
Condition
Min
Typ
Max Unit
Drain-Source Breakdown
Voltage
V(BR)DSS
20
V
VGS=0V,ID=250uA
Gate Threshold Voltage
VGS(th)
IGSS
0.6
1.2
V
VDS=VGS,ID=250uA
VDS=0V,VGS=+/-20V
VDS=20V,VGS=0V
Gate Leakage Current
±100 nA
1
Zero Gate Voltage Drain
Current
IDSS
uA
5
VDS=20V,VGS=0V
TJ=85℃
On-State Drain Current
ID(on)
VDS≦5V,VGS=4.5V
5
A
0.025 0.030
0.037 0.042
13
VGS=4.5V,ID=4.0A
Drain-source On-Resistance
Forward Transconductance
RDS(on)
Ω
VGS=2.5V,ID=3.4A
gfs
S
V
VDS=5V,ID=3.6A
IS=1.6A,VGS=0V
Diode Forward Voltage
Dynamic
VSD
0.8
1.2
Total Gate Charge
Qg
10.5
nC
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
2.0
2.5
VDS=10V,VGS=4.5V,VDS=2.8A
Input Capacitance
Ciss
Coss
Crss
805
155
122
VDS=8V,VGS=0V
f=1MHz
pF
nS
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Td(on)
tr
Td(off)
tf
18
5
45
22
VDD=10V, RL=10Ω, ID=4.0A,
VGEN=4.5V, RG=6Ω
Turn-Off Time
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205D 2007. V1
STANSON [ STANSON TECHNOLOGY ]
