STN8205D
Dual N Channel Enhancement Mode MOSFET
5.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Drain-Source Voltage
Symbol
VDSS
VGSS
ID
Typical
20
Unit
V
Gate-Source Voltage
+/-20
5.0
V
Continuous Drain Current
(TJ=150℃)
TA=25℃
TA=70℃
A
3.4
20
Pulsed Drain Current
IDM
IS
A
A
Continuous Source Current (Diode Conduction)
2
Power Dissipation
TA=25℃
TA=70℃
PD
1.15
0.75
150
W
Operation Junction Temperature
Storage Temperature Range
TJ
℃
℃
TSTG
RθJA
-55/150
100
Thermal Resistance-Junction to Ambient
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205D 2007. V1
STANSON [ STANSON TECHNOLOGY ]
