STN4412
N Channel Enhancement Mode MOSFET
6.8A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
30
V
V
1.0
3.0
±100
1
Gate Leakage Current
VDS=0V,VGS=±20V
VDS=24V,VGS=0V
nA
Zero Gate Voltage
Drain Current
IDSS
VDS=24V,VGS=0V
uA
5
TJ=85℃
On-State Drain
Current
VDS≧5V,VGS=10V
ID(on)
25
A
Drain-source On-
Resistance
VGS=10V,ID=6.8A
VGS=6.0V,ID=5.6A
22
30
28
36
RDS(on)
mΩ
Forward
Transconductance
gfs
VDS=15V,ID=6.2AV
IS=2.3A,VGS=0V
13
S
V
Diode Forward Voltage
VSD
0.8
1.2
24
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
16
3
VDS=15V,VGS=10V
Gate-Source Charge
ID≡2A
nC
pF
Gate-Drain Charge
Input Capacitance
2.5
Ciss
450
240
VDS ==15V,VGS=0V
F=1MHz
Output Capacitance
Coss
Reverse
TransferCapacitance
Crss
38
15
20
td(on)
tr
Turn-On Time
Turn-Off Time
VDD=15V,RL=15Ω
ID=1A,VGEN=-10V
RG=6Ω
6
12
20
80
nS
10
40
td(off)
tf
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4412 2007. V1
STANSON [ STANSON TECHNOLOGY ]
