STN4412
N Channel Enhancement Mode MOSFET
6.8A
※ STN4412S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
℃
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Drain-Source Voltage
Symbol
Typical
30
Unit
VDSS
V
V
Gate-Source Voltage
VGSS
ID
±20
TA=25℃
Continuous Drain Current
6.8
5.6
A
℃
(TJ=150 )
℃
TA=70
Pulsed Drain Current
IDM
IS
30
A
Continuous Source Current (Diode Conduction)
2.3
A
TA=25℃
2.8
1.6
Power Dissipation
PD
W
℃
℃
℃
TA=70
Operation Junction Temperature
Storgae Temperature Range
TJ
150
-55/150
80
TSTG
RθJA
℃
/W
Thermal Resistance-Junction to Ambient
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4412 2007. V1
STANSON [ STANSON TECHNOLOGY ]
