STM5853
P Channel Mode MOSFET with Schottky
-3.6A
℃
ELECTRICAL CHARACTERISTICS (Ta = 25 unless otherwise noted )
MOSFET
Parameter
Symbol
Condition
Min
Typ Max Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=+/-12V
-20
-0.35
V
V
nA
-0.8
100
VDS=-20V,VGS=0V
VDS=-20V, VGS =0V
-1
-5
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
uA
A
℃
Tj=55
≦
ID(on)
VDS -5V, VGS =-4.5V -6.0
RDS(on)
VGS =-4.5V, ID=3.4A
VGS =-2.5V, ID=-2.4A
VGS =-1.8V, ID=-1.7A
VDS =-5V, ID=-2.8V
IS=-1.6A,V VGS=0V
0.077
0.098
0.135
6
Ω
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
gfs
VSD
S
V
-0.8
-1.2
8
Total Gate Charge
Gate-Source Charge
Qg
Qgs
VDS=-6V, VGS =-4.5V
ID=-2.8A
4.8
1.0
nC
pF
Gate-Drain Charge
Input Capacitance
Output Capacitance
Qgd
Ciss
Coss
1.0
485
85
VDS=-6V, VGS =0V
f=1MHz
Reverse Transfer Capacitance
Turn-On Time
Crss
40
Ω
td(on)
tr
td(off)
tf
VDD=-6V,RL=6
ID=-1A,VGEN=-4.5V
10
13
18
15
25
60
70
60
nS
Ω
RG=6
Turn-Off Time
SCHOTTKY
Forward Voltage Drop
VF
IR
IF=0.5A
IF=0.5A, Tj=125C
VR=20V
VR=20V, Tj=85C
VR=10V
0.38 0.46
V
V
nA
0.33
0.4
Max Reverse Leakage Current
Junction Capacitance
100
1000
CT
31
pF
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STM5853 2008. V1
STANSON [ STANSON TECHNOLOGY ]
