P Channel Mode MOSFET with Schottky
STM5853
-3.6A
DESCRIPTION
STM5853 is the P-Channel logic enhancement mode power field effect transistors with
Schottky Diode. The MOSFET is produced using high cell density, DMOS trench
technology. This high density process is especially tailored to minimize on-state
resistance. This device is particularly suited for charging switch for cellular phone and
other battery powered circuits
PIN CONFIGURATION
DFN8
FEATURE
-20V/-3.4A, R
DS(ON)
= 77m-ohm(Typ.)
@VGS = -4.5V
-20V/-2.4A, R
DS(ON)
= 98m-ohm
@VGS = -2.5V
-20V/-1.7A, R
DS(ON)
= 135m-ohm
@VGS = -1.8V
20V/1.0A, Vf =0.46V @ 0.5A
Super high density cell design for
extremely low R
DS(ON)
J: Part Marking
X: Year Code
A: Process Code
ORDERING INFORMATION
Part Number
STM5853QF8RG
Package
DFN8
Part Marking
SYA
※
Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※
STM5853QF8RG
QF8 : QFN8; R: Tape Reel ; G: Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STM5853 2008. V1
STANSON [ STANSON TECHNOLOGY ]
