STC6332
N&P Pair Enhancement Mode MOSFET
0.95A / -1A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
VGS=0V,ID=250uA
VGS=0V,ID=-250uA
VDS=VGS,ID=250uA
VDS=VGS,ID=-250uA
N
P
N
P
20
-20
0.35
-0.35
V(BR)DSS
VGS(th)
IGSS
V
1.0
-1.0
Gate Threshold Voltage
Gate Leakage Current
V
±
VDS=0V,VGS= 12V
N
P
100
-100
nA
±
VDS=0V,VGS= 12V
VDS=20V,VGS=0V
VDS=-20V,VGS=0V
VDS=20V,VGS=0V
VDS=-20V,VGS=0V
N
P
N
P
1
-1
5
IDSS
TJ=55
Zero Gate Voltage Drain
Current
℃
uA
A
-5
≧
VDS 4.5V,VGS=5V
N
P
2
-2
On-State Drain Current
ID(on)
V
DS≦-4.5V,VGS=-5V
0.26
=
N
P
VGS 4.5V, ID=0.95A
0.38
0.52
0.42
VGS=-4.5V,ID=-1.0A
=
VGS 2.5V, ID=0.75A
N
P
0.32
0.58
0.45
0.70
Ω
Drain-source On-Resistance RDS(on)
VGS=-2.5V,ID=-0.8 A
=
N
P
N
P
N
P
VGS 1.8V, ID=0.65A
0.42
0.75
0.80
0.95
VGS=-1.8V,ID=-0.5 A
VDS=10V,ID=1.2A
VDS=-10V,ID=-1.0A
IS=0.5A,VGS=0V
2.6
1.5
0.8
Forward Tran Conductance
S
V
gfs
VSD
1.2
Diode Forward Voltage
Dynamic
IS=-0.5A,VGS=0V
-0.8 -1.2
N-Channel
VDS=10V,VGS=4.5V
N
P
N
P
N
P
1.2
1.1
0.2
0.3
0.3
0.2
15
18
20
25
25
2.0
1.8
Total Gate Charge
Qg
Qgs
Qgd
≡
ID 1.2A
Gate-Source Charge
Gate-Drain Charge
P-Channel
VDS=-10V,VGS=-4.5V
nC
nS
≡
ID -1.0A
N
P
N
P
N
P
25
30
30
40
40
30
N-Channel
VDS=10V,RL=20
ID=0.5A,RGEN=6
td(on)
tr
Ω
Turn-On Time
Turn-Off Time
Ω
V
=4.5V
GEN
P-Channel
20
Ω
VDS=-10V,RL=20
td(off)
tf
Ω
N
P
12
12
20
20
ID=-0.5A,RGEN=-6
VGEN=-4.5V
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6332 2009. V1
STANSON [ STANSON TECHNOLOGY ]
