ST3401SRG
P Channel Enhancement Mode MOSFET
ꢀ4.0A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
Unit
Static
DrainꢀSource Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=ꢀ250uA
ꢀ30
V
V
Gate Threshold Voltage
VDS=V ,ID=ꢀ250uA ꢀ0.4
ꢀ1.0
GS
±
±
100
VDS=0V,VGS= 12V
Gate Leakage Current
nA
VDS=ꢀ24V,VGS=0V
VDS=ꢀ24V,VGS=0V
ꢀ1
Zero Gate Voltage Drain
Current
IDSS
uA
ꢀ10
℃
TJ=55
VGS=ꢀ10V,ID=ꢀ4.0A
VGS=ꢀ4.5V,ID=ꢀ3.2A
VGS=ꢀ2.5V,ID=ꢀ1.2A
61
70
98
55
62
90
Ω
m
Drainꢀsource OnꢀResistance
RDS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
gfs
VDS=ꢀ5V,ID=ꢀ4.0V
IS=ꢀ1.0A,VGS=0V
10
S
VSD
ꢀ1.2
21
V
Total Gate Charge
GateꢀSource Charge
GateꢀDrain Charge
Qg
Qgs
Qgd
14
1.9
3.7
VDS=ꢀ15V
VGS=ꢀ10V
nC
pF
≡
ID ꢀ4.0A
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Ciss
Coss
540
131
VDS=ꢀ15V
VGS=0V
F=1MHz
Crss
105
10
15
VDS=ꢀ15V
VGS=ꢀ15V
ID=ꢀ1A
td(on)
TurnꢀOn Time
TurnꢀOff Time
tr
15
31
20
25
50
30
nS
Ω
RL=6
td(off)
tf
Ω
RG=ꢀ10
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3401SRG 2009. V1