ST2300
N Channel Enhancement Mode MOSFET
4A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
20
V
V
Gate Threshold Voltage
0.4
1.0
±
±
VDS=0V,VGS= 20V
100
1
Gate Leakage Current
nA
VDS=20V,VGS=0V
VDS=20V,VGS=0V
Zero Gate Voltage Drain
Current
IDSS
uA
A
10
℃
TJ=85
≧
On-State Drain Current
ID(on)
VDS 5V,VGS=4.5V
6
VGS=10V,ID=6.0A
VGS=4.5V,ID=5.0A
VGS=2.5V,ID=4.5A
VGS=1.8V,ID=4.0A
0.022
0.026
0.029
0.035
Ω
Drain-source On-Resistance
RDS(on)
Forward Tranconductance
Diode Forward Voltage
Dynamic
gfs
VDS=15V,ID=5.0A
IS=1.7A,VGS=0V
30
S
V
VSD
0.9 1.3
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
10
1.4
2.1
13
VDS=10V
VGS=4.5V
ID 5A
nC
pF
≣
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
600
120
100
VDS=10V
VGS=0V
F=1MHz
Reverse Transfer Capacitance
15
25
VDD=10V
RL=10
ID=1A
VGEN=4.5V
td(on)
Turn-On Time
Turn-Off Time
Ω
tr
40
45
30
60
65
40
nS
td(off)
tf
Ω
RG=6
3
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2300 2005. V1
STANSON [ STANSON TECHNOLOGY ]
