ST2300
N Channel Enhancement Mode MOSFET
4A
℃
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Symbol
VDSS
VGSS
ID
Typical
Unit
Drain-Source Voltage
Gate-Source Voltage
20
V
V
±
12
TA=25℃
4.0
3.0
℃
Continuous Drain Current (TJ=150 )
A
℃
TA=70
Pulsed Drain Current
IDM
13
A
Continuous Source Current (Diode Conduction)
Power Dissipation
IS
1.0
A
TA=25℃
1.25
0.8
PD
W
℃
℃
℃
TA=70
Operation Junction Temperature
Storage Temperature Range
TJ
150
-55/150
140
TSTG
℃
/W
Rθ
Thermal Resistance-Junction to Ambient
JA
2
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2300 2005. V1