P Channel Enchancement Mode MOSFET
-1.7A
ST2303
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter Symbol Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-10uA -30
V
-3.0 V
+100 nA
-1
Gate Threshold Voltage
Gate Leakage Current
VGS(th) VDS=VGS,ID=-250uA -1.0
IGSS
VDS=0V,VGS=+20V
VDS=-30V,VGS=0V
VDS=-30V,VGS=0V
Zero Gate Voltage Drain Current
IDSS
uA
-10
℃
TJ=55
On-State Drain Current
ID(on)
-6
A
≦
VDS -5V,VGS=-10V
Drain-source On-Resistance
RDS(on) VGS=-10V,ID=-2.6A
VGS=-4.5V,ID=-2.0A
0.095 0.130
0.125 0.180
2.4
Ω
Forward Transconductance
Diode Forward Voltage
Dynamic
VDS=-10V,ID=-1.7V
S
gfs
VSD
IS=-1.25A,VGS=0V
-0.8 -1.2 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS=-15V,VGS=-10V
5.8 10
nC
0.8
1.5
226
≡
ID -1.7A
VDS=-15V,VGS=0V
F=1MHz
PF
nS
87
19
9
20
20
td(on)
tr
td(off)
tf
Ω
VDD=-15V,RL=15
9
ID=-1.0A,VGEN=-10V
Turn-Off Time
18
6
35
20
Ω
RG=6
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page3
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