P Channel Enchancement Mode MOSFET
-1.7A
ST2303
℃
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
ID
Typical
-30
Unit
V
+20
V
-2.6
-2.0
A
℃ TA=25℃
Continuous Drain Current (TJ=150 )
℃
TA=70
Pulsed Drain Current
IDM
IS
-10
A
A
Continuous Source Current (Diode Conduction)
-1.25
Power Dissipation
PD
1.25
0.8
W
TA=25℃
℃
TA=70
Operation Junction Temperature
Storgae Temperature Range
TJ
150
-55/150
100
℃
℃
℃
TSTG
Thermal Resistance-Junction to Ambient
Rθ
JA
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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