SSM4410M
f=1.0MHz
10000
1000
100
12
10
8
I D =10A
DS =15V
V
Ciss
Coss
Crss
6
4
2
0
10
0
5
10
15
20
25
1
7
13
19
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
100.00
10.00
1.00
2
1
0
T j =150 o C
T j =25 o C
0.10
0.01
0
0.4
0.8
1.2
-50
0
50
100
150
T j , Jujnction Temperature ( o C )
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.02 12/29/2003
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