SSM4410M
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
30
-
-
0.037
-
-
V
∆BV DSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
-
V/°C
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=10A
-
13.5
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=15V, ID=10A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
22
3
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
-
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
20
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
j
-
1
Drain-Source Leakage Current (T=55oC)
-
25
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
V =
GS
-
± 20V
±100
ID=10A
16.6
2.7
10.6
9.6
12.4
25.4
33
745
510
210
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
VDS=15V
VGS=5V
VDS=25V
ID=1A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω , VGS=5V
RD=25Ω
-
-
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=15V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
A
A
V
IS
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage2
VD=VG=0V , VS=1.3V
-
-
-
-
2.3
50
ISM
VSD
Tj=25°C, IS=2.3A, VGS=0V
-
-
1.3
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10 sec.
Rev.2.02 12/29/2003
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