HUR3020CTS
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
40
500
20
A
TVJ = 100°C
VR = 150V
TVJ = 100°C
VR = 150V
nC
A
400
IF = 30A
IF = 15A
IF = 7.5A
30
15
IF
IRM
Qr
TVJ = 150°C
TVJ = 100°C
IF = 30A
IF = 15A
IF = 7.5A
300
200
100
0
20
10
0
10
5
TVJ = 25°C
0
V
0
1
2
A/us
-diF/dt
100
1000
0
200 400 600 800 1000
A/us
-diF/dt
VF
Fig. 1 Forward current IF versus VF
1.4
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
80
14
0.85
us
TVJ = 100°C
TVJ = 100°C
ns
V
VR = 150V
IF = 15A
70
12
0.80
trr
VFR
tfr
1.2
Kf
tfr
IF = 30A
VFR
60
10
0.75
0.70
0.65
0.60
IF = 15A
IF = 7.5A
1.0
IRM
50
8
6
4
Qr
0.8
40
30
0.6
A/us
0
40
80
120
160
0
200 400 600 800 1000
A/us
0
200 400 600 800 1000
°C
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
10
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
1
1
2
3
0.908
0.35
0.342
0.005
0.0003
0.017
ZthJC
0.1
0.01
0.001
0.00001
s
0.0001
0.001
0.01
0.1
1
t
Fig. 7 Transient thermal resistance junction to case
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
