HUR3020CTS
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol
Test Conditions
Characteristic Values
Unit
typ.
max.
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
100
0.5
uA
mA
IR
IF=15A; TVJ=150oC
1.21
1.68
V
VF
TVJ=25oC
RthJC
RthCH
1.6
K/W
0.5
30
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100oC
ns
A
trr
2.7
IRM
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Antiparallel diode for high frequency
switching devices
* Avalanche voltage rated for reliable
operation
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
* Soft recovery behaviour
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders